发明授权
- 专利标题： Transient voltage suppressor having symmetrical breakdown voltages
- 专利标题（中）： 具有对称击穿电压的瞬态电压抑制器
-
申请号： US12433358申请日： 2009-04-30
-
公开(公告)号： US08288839B2公开(公告)日： 2012-10-16
- 发明人: Lingpeng Guan , Madhur Bobde , Anup Bhalla
- 申请人： Lingpeng Guan , Madhur Bobde , Anup Bhalla
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha & Omega Semiconductor, Inc.
- 当前专利权人： Alpha & Omega Semiconductor, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Patent Law Group LLP
- 代理商 Carmen C. Cook
- 主分类号： H01L29/866
- IPC分类号： H01L29/866
摘要：
A vertical transient voltage suppressing (TVS) device includes a semiconductor substrate of a first conductivity type where the substrate is heavily doped, an epitaxial layer of the first conductivity type formed on the substrate where the epitaxial layer has a first thickness, and a base region of a second conductivity type formed in the epitaxial layer where the base region is positioned in a middle region of the epitaxial layer. The base region and the epitaxial layer provide a substantially symmetrical vertical doping profile on both sides of the base region. In one embodiment, the base region is formed by high energy implantation. In another embodiment, the base region is formed as a buried layer. The doping concentrations of the epitaxial layer and the base region are selected to configure the TVS device as a punchthrough diode based TVS or an avalanche mode TVS.
公开/授权文献
信息查询
IPC分类:
