Invention Grant
- Patent Title: Critical dimension for trench and vias
- Patent Title (中): 沟槽和通孔的关键尺寸
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Application No.: US11927658Application Date: 2007-10-29
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Publication No.: US08293545B2Publication Date: 2012-10-23
- Inventor: Hai Cong , Yan Shan Li , Chun Hui Low , Yelehanka Ramachandramurthy Pradeep , Liang Choo Hsia
- Applicant: Hai Cong , Yan Shan Li , Chun Hui Low , Yelehanka Ramachandramurthy Pradeep , Liang Choo Hsia
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; H01L23/58 ; H01L29/10
Abstract:
Test structures including test trenches are used to define critical dimension of trenches in a via level of an integrated circuit to produce substantially the same depth. The trenches are formed at the periphery of the IC to serve as guard rings.
Public/Granted literature
- US20090108257A1 CRITICAL DIMENSION FOR TRENCH AND VIAS Public/Granted day:2009-04-30
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