Invention Grant
- Patent Title: Fabricating method for micro gas sensor and the same
- Patent Title (中): 微气体传感器的制造方法及其相同
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Application No.: US12810850Application Date: 2008-12-26
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Publication No.: US08293556B2Publication Date: 2012-10-23
- Inventor: Kwang Bum Park , Seong Dong Kim , Joon Shik Park , Min Ho Lee
- Applicant: Kwang Bum Park , Seong Dong Kim , Joon Shik Park , Min Ho Lee
- Applicant Address: KR Seongnam, Gyeonggi Province
- Assignee: Korea Electronics Technology Institute
- Current Assignee: Korea Electronics Technology Institute
- Current Assignee Address: KR Seongnam, Gyeonggi Province
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2007-0141055 20081226
- International Application: PCT/KR2008/007701 WO 20081226
- International Announcement: WO2009/084871 WO 20090709
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G01N9/00

Abstract:
There are provided a micro gas sensor and a method for fabricating the same that comprises a micro heater formed inside a polysilicon membrane by doping impurities into a specific region of the polysilicon membrane positioned under a gas sensing substance, thereby improving thermal structural stability and making it easy to form the gas sensing substance. The micro gas sensor comprises: a micro heater formed by doping impurities into polysilicon vapor-deposited on a substrate on which a first insulating layer is formed; a polysilicon membrane for decreasing a heat loss of the micro heater; a power electrode for supplying power and a temperature measurement electrode for measuring a temperature, positioned at both ends of the micro heater; a second insulating layer formed on the micro heater; a sensing substance formed on the second insulating layer, for sensing a gas; and a sensing electrode for measuring a change in properties of the sensing substance. The method for fabricating a micro gas sensor comprises steps of: forming polysilicon on a substrate on which a first insulating layer is formed; forming a micro heater by doping impurities into the polysilicon; forming electrodes at both ends of the micro heater; forming a second insulating layer on the micro heater; forming a sensing substance on the second insulating layer; and forming a sensing electrode on the sensing substance.
Public/Granted literature
- US20100314700A1 FABRICATING METHOD FOR MICRO GAS SENSOR AND THE SAME Public/Granted day:2010-12-16
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