发明授权
- 专利标题: Methods of fabrication of semiconductor devices with low capacitance
- 专利标题(中): 具有低电容的半导体器件的制造方法
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申请号: US12618505申请日: 2009-11-13
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公开(公告)号: US08293616B2公开(公告)日: 2012-10-23
- 发明人: Cheng-Hung Chang , Yu-Rung Hsu , Chen-Hua Yu
- 申请人: Cheng-Hung Chang , Yu-Rung Hsu , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
Semiconductor devices with low junction capacitances and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming isolation regions in a substrate to form active areas. The sidewalls of the active areas are enclosed by the isolation regions. The isolation regions are recessed to expose first parts of the sidewalls of the active areas. The first parts of the sidewalls of the active areas are covered with spacers. The isolation regions are etched to expose second parts of the sidewalls of the active area, the second parts being disposed below the first parts. The active areas are etched through the exposed second parts of the sidewalls to form lateral openings. The lateral openings are filled with a spin on dielectric.