发明授权
US08293643B2 Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon
有权
在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构
- 专利标题： Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon
- 专利标题（中）： 在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构
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申请号： US12819634申请日： 2010-06-21
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公开(公告)号： US08293643B2公开(公告)日： 2012-10-23
- 发明人: Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
- 申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Connolly Bove Lodge & Hutz LLP
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/477
- IPC分类号： H01L21/477
摘要：
A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
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