Nanowire memory device and method of manufacturing the same

Invention Grant

US08293654B2 Nanowire memory device and method of manufacturing the same 有权

Title translation: 纳米线记忆装置及其制造方法

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Patent Title: Nanowire memory device and method of manufacturing the same
Patent Title (中): 纳米线记忆装置及其制造方法
Application No.: US13425807

Application Date: 2012-03-21
Publication No.: US08293654B2

Publication Date: 2012-10-23
Inventor: Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
Applicant: Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
Applicant Address: KR Suwon-si KR Seoul
Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
Current Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
Current Assignee Address: KR Suwon-si KR Seoul
Agency: Sughrue Mion, PLLC
Priority: KR10-2006-0021874 20060308
Main IPC: H01L21/308
IPC: H01L21/308

Nanowire memory device and method of manufacturing the same

Abstract:

A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract(Chinese):

提供了一种纳米线存储器件及其制造方法。存储器件包括：衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线，其中在第一和第二电极之间存在绝缘层。

Public/Granted literature

US20120178233A1 NANOWIRE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-07-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）