Invention Grant
- Patent Title: Processes for forming photovoltaic devices
- Patent Title (中): 用于形成光伏器件的工艺
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Application No.: US12536238Application Date: 2009-08-05
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Publication No.: US08294024B2Publication Date: 2012-10-23
- Inventor: William J. Borland , Jon-Paul Maria
- Applicant: William J. Borland , Jon-Paul Maria
- Applicant Address: US DE Wilmington US NC Raleigh
- Assignee: E I du Pont de Nemours and Company,North Carolina State University
- Current Assignee: E I du Pont de Nemours and Company,North Carolina State University
- Current Assignee Address: US DE Wilmington US NC Raleigh
- Main IPC: H01L31/07
- IPC: H01L31/07
![Processes for forming photovoltaic devices](/abs-image/US/2012/10/23/US08294024B2/abs.jpg.150x150.jpg)
Abstract:
Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Schottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Schottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.
Public/Granted literature
- US20100037942A1 COMPOSITIONS AND PROCESSES FOR FORMING PHOTOVOLTAIC DEVICES Public/Granted day:2010-02-18
Information query
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