Invention Grant
- Patent Title: EMS tunable transistor
- Patent Title (中): EMS可调晶体管
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Application No.: US13033423Application Date: 2011-02-23
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Publication No.: US08294184B2Publication Date: 2012-10-23
- Inventor: Manish Kothari , Alok Govil
- Applicant: Manish Kothari , Alok Govil
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A field effect transistor comprises an electrostatically moveable gate electrode. The moveable gate is supported by at least two posts, and the source, drain, and channel of the transistor are centrally located under the moveable layer. At least one electrode is positioned on at least two sides of the source, drain, and channel.
Public/Granted literature
- US20120212289A1 EMS TUNABLE TRANSISTOR Public/Granted day:2012-08-23
Information query
IPC分类:
