Invention Grant
US08296930B2 Method for manufacturing a magnetoresistive sensor having a flat shield
有权
具有平面屏蔽的磁阻传感器的制造方法
- Patent Title: Method for manufacturing a magnetoresistive sensor having a flat shield
- Patent Title (中): 具有平面屏蔽的磁阻传感器的制造方法
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Application No.: US12645323Application Date: 2009-12-22
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Publication No.: US08296930B2Publication Date: 2012-10-30
- Inventor: Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
- Applicant: Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00

Abstract:
A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.
Public/Granted literature
- US20110146061A1 METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR HAVING A FLAT SHIELD Public/Granted day:2011-06-23
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