发明授权
- 专利标题： Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films
- 专利标题（中）： 用于沉积含过渡金属的膜的杂环戊二烯基过渡金属前体
-
申请号： US12509024申请日： 2009-07-24
-
公开(公告)号： US08298616B2公开(公告)日： 2012-10-30
- 发明人: Christian Dussarrat , Clement Lansalot-Matras
- 申请人： Christian Dussarrat , Clement Lansalot-Matras
- 申请人地址： US CA Fremont
- 专利权人： American Air Liquide, Inc.
- 当前专利权人： American Air Liquide, Inc.
- 当前专利权人地址： US CA Fremont
- 代理商 Patricia E. McQueeney
- 主分类号： B05D3/02
- IPC分类号： B05D3/02
摘要：
Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.