Invention Grant
- Patent Title: Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films
- Patent Title (中): 用于沉积含过渡金属的膜的杂环戊二烯基过渡金属前体
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Application No.: US12509024Application Date: 2009-07-24
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Publication No.: US08298616B2Publication Date: 2012-10-30
- Inventor: Christian Dussarrat , Clement Lansalot-Matras
- Applicant: Christian Dussarrat , Clement Lansalot-Matras
- Applicant Address: US CA Fremont
- Assignee: American Air Liquide, Inc.
- Current Assignee: American Air Liquide, Inc.
- Current Assignee Address: US CA Fremont
- Agent Patricia E. McQueeney
- Main IPC: B05D3/02
- IPC: B05D3/02
Abstract:
Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.
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