Invention Grant
- Patent Title: Process for wet singulation using a dicing singulation structure
- Patent Title (中): 使用切割分离结构进行湿分离的方法
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Application No.: US12423254Application Date: 2009-04-14
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Publication No.: US08298917B2Publication Date: 2012-10-30
- Inventor: Paul S. Andry , Timothy H. Daubenspeck , Jeffrey P. Gambino , Edmund J. Sprogis , Cornelia K. Tsang
- Applicant: Paul S. Andry , Timothy H. Daubenspeck , Jeffrey P. Gambino , Edmund J. Sprogis , Cornelia K. Tsang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Richard M. Kotulak, Esq.
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
A method includes receiving at least one wafer having a front side and a backside, where the front side has a plurality of integrated circuit chips thereon. The backside of the wafer is thinned, a pattern of material is removed from the backside of the wafer to form a plurality of dicing trenches. Each of the dicing trenches are positioned opposite a location on the front side of the wafer that corresponds to edges of each of the plurality of chips. The dicing trenches are filled with a filler material and a dicing support is attached to a front side of the wafer. The filler material is removed from the dicing trenches, and a force is applied to the dicing support to separate each of the plurality of chips on the wafer from each other along the dicing trenches.
Public/Granted literature
- US20100261335A1 PROCESS FOR WET SINGULATION USING A DICING MOAT STRUCTURE Public/Granted day:2010-10-14
Information query
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