发明授权
US08298930B2 Undercut-repair of barrier layer metallurgy for solder bumps and methods thereof
有权
用于焊料凸块的阻挡层冶金的底切修复及其方法
- 专利标题： Undercut-repair of barrier layer metallurgy for solder bumps and methods thereof
- 专利标题（中）： 用于焊料凸块的阻挡层冶金的底切修复及其方法
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申请号： US12959697申请日： 2010-12-03
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公开(公告)号： US08298930B2公开(公告)日： 2012-10-30
- 发明人: Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter
- 申请人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 David Cain
- 主分类号： H01L23/488
- IPC分类号： H01L23/488
摘要：
A method of making a semiconductor structure includes patterning a barrier layer metallurgy (BLM) which forms an undercut beneath a solder material, and forming a repair material in the undercut and on the solder material. The method also includes removing the repair material from the solder material, and reflowing the solder material.