Invention Grant
US08299519B2 Read transistor for single poly non-volatile memory using body contacted SOI device
失效
使用身体接触的SOI器件读取用于单个多晶非易失性存储器的晶体管
- Patent Title: Read transistor for single poly non-volatile memory using body contacted SOI device
- Patent Title (中): 使用身体接触的SOI器件读取用于单个多晶非易失性存储器的晶体管
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Application No.: US12685335Application Date: 2010-01-11
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Publication No.: US08299519B2Publication Date: 2012-10-30
- Inventor: Anthony I. Chou , Arvind Kumar
- Applicant: Anthony I. Chou , Arvind Kumar
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joseph Abate
- Main IPC: H01L27/092
- IPC: H01L27/092
Abstract:
A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET.
Public/Granted literature
- US20110169064A1 READ TRANSISTOR FOR SINGLE POLY NON-VOLATILE MEMORY USING BODY CONTACTED SOI DEVICE Public/Granted day:2011-07-14
Information query
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