发明授权
US08299519B2 Read transistor for single poly non-volatile memory using body contacted SOI device
失效
使用身体接触的SOI器件读取用于单个多晶非易失性存储器的晶体管
- 专利标题： Read transistor for single poly non-volatile memory using body contacted SOI device
- 专利标题（中）： 使用身体接触的SOI器件读取用于单个多晶非易失性存储器的晶体管
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申请号： US12685335申请日： 2010-01-11
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公开(公告)号： US08299519B2公开(公告)日： 2012-10-30
- 发明人: Anthony I. Chou , Arvind Kumar
- 申请人： Anthony I. Chou , Arvind Kumar
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Joseph Abate
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET.