Invention Grant
- Patent Title: Temperature detection circuit of semiconductor memory apparatus
- Patent Title (中): 半导体存储装置的温度检测电路
-
Application No.: US12650073Application Date: 2009-12-30
-
Publication No.: US08300486B2Publication Date: 2012-10-30
- Inventor: Je-Yoon Kim , Jong-Chern Lee
- Applicant: Je-Yoon Kim , Jong-Chern Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2009-0053348 20090616
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
A temperature detection circuit of a semiconductor memory apparatus includes a fixed period oscillator, a temperature variable signal generating unit and a counting unit. The oscillator is configured to generate a fixed period oscillator signal when an enable signal is enabled. The temperature variable signal generating unit is configured to generate a temperature variable signal whose enable interval varies based on temperature variations, when the enable signal is enabled. The counting unit is configured to count the oscillator signal during the enable interval of the temperature variable signal to generate a temperature information signal.
Public/Granted literature
- US20100315896A1 TEMPERATURE DETECTION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2010-12-16
Information query