Invention Grant
US08301829B2 Flash memory device and flash memory system including buffer memory
有权
闪存设备和闪存系统包括缓冲存储器
- Patent Title: Flash memory device and flash memory system including buffer memory
- Patent Title (中): 闪存设备和闪存系统包括缓冲存储器
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Application No.: US13108687Application Date: 2011-05-16
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Publication No.: US08301829B2Publication Date: 2012-10-30
- Inventor: Jin-Yub Lee
- Applicant: Jin-Yub Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2003-91307 20031215
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A flash memory device includes a flash memory and a buffer memory. The flash memory is divided into a main region and a spare region. The buffer memory is a random access memory and has the same structure as the flash memory. In addition, the flash memory device further includes control means for mapping an address of the flash memory applied from a host so as to divide a structure of the buffer memory into a main region and a spare region and for controlling the flash memory and the buffer memory to store data of the buffer memory in the flash memory or to store data of the flash memory in the buffer memory.
Public/Granted literature
- US20110219179A1 FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING BUFFER MEMORY Public/Granted day:2011-09-08
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