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US08304308B2 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length 有权
具有双极结型晶体管的半导体结构的配置和制造，其中非单晶半导体间隔部分控制基极连接长度

  • Patent Title: Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
  • Patent Title (中): 具有双极结型晶体管的半导体结构的配置和制造，其中非单晶半导体间隔部分控制基极连接长度
  • Application No.: US13198601
    Application Date: 2011-08-04
  • Publication No.: US08304308B2
    Publication Date: 2012-11-06
  • Inventor: Jeng-Jiun Yang , Constantin Bulucea
  • Applicant: Jeng-Jiun Yang , Constantin Bulucea
  • Applicant Address: US CA Santa Clara
  • Assignee: National Semiconductor Corporation
  • Current Assignee: National Semiconductor Corporation
  • Current Assignee Address: US CA Santa Clara
  • Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
  • Main IPC: H01L27/06
  • IPC: H01L27/06
Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
Abstract:
A semiconductor structure contains a bipolar transistor (101) and a spacing structure (265-1 or 265-2). The transistor has an emitter (241), a base (243), and a collector (245). The base is formed with an intrinsic base portion (243I), a base link portion (243L), and a base contact portion (245C). The intrinsic base portion is situated below the emitter and above material of the collector. The base link portion extends between the intrinsic base portion and the base contact portions. The spacing structure includes an isolating dielectric layer (267-1 or 267-2) and a spacing component. The dielectric layer extends along the upper semiconductor surface. The spacing component includes a lateral spacing portion (269-1 or 269-2) of largely non-monocrystalline semiconductor material, preferably polycrystalline semiconductor material, situated on the dielectric layer above the base link portion. Opposite first and second upper edges of the lateral spacing portion (275-1 and 277-1) laterally conform to opposite first and second lower edges (297-1 and 299-1) of the base link portion so as to determine, and thereby control, its length.
Abstract(Chinese):

半导体结构包含双极晶体管（101）和间隔结构（265-1或265-2）。 晶体管具有发射极（241），基极（243）和集电极（245）。 基部形成有本征基部（243I），基部连接部（243L）和基部接触部（245C）。 本征基部位于发射极之下和集电极材料之上。 基部连接部在本征基部与基部接触部之间延伸。 间隔结构包括隔离电介质层（267-1或267-2）和间隔部件。 电介质层沿着上半导体表面延伸。 间隔部件包括位于基部连接部分上方的电介质层上的大部分非单晶半导体材料（优选多晶半导体材料）的侧向间隔部分（269-1或269-2）。 横向间隔部分（275-1和277-1）的相对的第一和第二上边缘横向地与基部连杆部分的相对的第一和第二下边缘（297-1和299-1）相一致，以便确定，从而 控制，其长度。

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