Invention Grant
- Patent Title: Light-emitting device and the manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US12795169Application Date: 2010-06-07
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Publication No.: US08304787B2Publication Date: 2012-11-06
- Inventor: Chung-Ying Chang , Wen-Jia Huang , Chao-Hsu Lai , Tien Kun Lin
- Applicant: Chung-Ying Chang , Wen-Jia Huang , Chao-Hsu Lai , Tien Kun Lin
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW98119155A 20090608
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of −10 μA/mm2, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2.
Public/Granted literature
- US20100308348A1 LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2010-12-09
Information query
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