Invention Grant
US08304841B2 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
有权
金属栅极晶体管，集成电路，系统及其制造方法
- Patent Title: Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
- Patent Title (中): 金属栅极晶体管，集成电路，系统及其制造方法
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Application No.: US12761918Application Date: 2010-04-16
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Publication No.: US08304841B2Publication Date: 2012-11-06
- Inventor: Jeff J. Xu , Cheng-Tung Lin , Hsiang-Yi Wang , Wen-Chin Lee , Betty Hsieh
- Applicant: Jeff J. Xu , Cheng-Tung Lin , Hsiang-Yi Wang , Wen-Chin Lee , Betty Hsieh
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A gate-last method for forming a metal gate transistor is provided. The method includes forming an opening within a dielectric material over a substrate. A gate dielectric structure is formed within the opening and over the substrate. A work function metallic layer is formed within the opening and over the gate dielectric structure. A silicide structure is formed over the work function metallic layer.
Public/Granted literature
- US20110062526A1 METAL GATE TRANSISTOR, INTEGRATED CIRCUITS, SYSTEMS, AND FABRICATION METHODS THEREOF Public/Granted day:2011-03-17
Information query
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