发明授权
US08304983B2 ITO film treated by nitrogen plasma and the organic luminescent device using the same
有权
通过氮等离子体处理的ITO膜和使用其的有机发光装置
- 专利标题： ITO film treated by nitrogen plasma and the organic luminescent device using the same
- 专利标题（中）： 通过氮等离子体处理的ITO膜和使用其的有机发光装置
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申请号： US12588692申请日： 2009-10-23
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公开(公告)号： US08304983B2公开(公告)日： 2012-11-06
- 发明人: Se Hwan Son , Min Soo Kang , Sang Young Jeon , Jong Geol Kim
- 申请人： Se Hwan Son , Min Soo Kang , Sang Young Jeon , Jong Geol Kim
- 申请人地址： KR Seoul
- 专利权人： LG Chem, Ltd.
- 当前专利权人： LG Chem, Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： McKenna Long & Aldridge LLP
- 优先权： KR10-2003-0032864 20030523
- 主分类号： H01L51/10
- IPC分类号： H01L51/10 ; H01L29/12 ; H01L29/201
摘要：
Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic elect roluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.
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