Invention Grant
- Patent Title: Pixel structure and method for fabricating the same
- Patent Title (中): 像素结构及其制造方法
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Application No.: US12507935Application Date: 2009-07-23
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Publication No.: US08305508B2Publication Date: 2012-11-06
- Inventor: Hsiang-Lin Lin
- Applicant: Hsiang-Lin Lin
- Applicant Address: TW Hsin-Chu
- Assignee: AU Optronics Corporation
- Current Assignee: AU Optronics Corporation
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW98103286A 20090202
- Main IPC: G02F1/136
- IPC: G02F1/136

Abstract:
A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode of the first patterned metal layer. A source electrode of the second patterned metal layer is electrically connected by the conducting layer to a second data line segment of the first patterned metal layer. A method for fabricating a pixel structure is also disclosed herein.
Public/Granted literature
- US20100193827A1 Pixel Structure and Method for Fabricating the Same Public/Granted day:2010-08-05
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