发明授权
US08306082B2 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
有权
III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
- 专利标题: Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
- 专利标题(中): III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
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申请号: US12846361申请日: 2010-07-29
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公开(公告)号: US08306082B2公开(公告)日: 2012-11-06
- 发明人: Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
- 申请人: Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
- 申请人地址: JP Osaka-shi
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi
- 代理机构: Venable LLP
- 代理商 Michael A. Sartori
- 优先权: JPP2009-209619 20090910
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.