In order to prevent occurrence of a residual film distribution dependent upon a pattern density of a mold, in producing the mold to be used for imprint lithography, by etching using a mask, use is made of a first mask M1 for forming a desired pattern to be formed on a surface of the mold, and a second mask M2 for partially covering the first mask such that the area covering openings of the first mask is made larger as an opening ratio of the pattern formed on the first mold surface is higher, thereby to make a volume of a recess of the mold in a given area; in which, after the mold is etched by the first mask, etching is further conducted by covering partially the first mask with the second mask without removing the first mask; or alternatively, the etching is conducted with the first mask and the second mask overlapped from the beginning, thereby to use the second mask as a mask for delaying the etching, for conduct the etching.