发明授权
- 专利标题： Power MOSFET with a gate structure of different material
- 专利标题（中）： 功率MOSFET具有栅极结构不同的材料
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申请号： US13088071申请日： 2011-04-15
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公开(公告)号： US08309410B2公开(公告)日： 2012-11-13
- 发明人: Daniel T. Pham , Bich-Yen Nguyen
- 申请人： Daniel T. Pham , Bich-Yen Nguyen
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 David G. Dolezal; James L. Clingan, Jr.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor device includes a semiconductor layer of a first conductivity type and a first doping concentration. A first semiconductor region, used as drain, of the first conductivity type has a lower doping concentration than the semiconductor layer and is over the semiconductor layer. A gate dielectric is over the first semiconductor region. A gate electrode over the gate dielectric has a metal-containing center portion and first and second silicon portions on opposite sides of the center portion. A second semiconductor region, used as a channel, of the second conductivity type has a first portion under the first silicon portion and the gate dielectric. A third semiconductor region, used as a source, of the first conductivity type is laterally adjacent to the first portion of the second semiconductor region. The metal-containing center portion, replacing silicon, increases the source to drain breakdown voltage.
公开/授权文献
- US20110195556A1 POWER MOSFET WITH A GATE STRUCTURE OF DIFFERENT MATERIAL 公开/授权日：2011-08-11
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