发明授权
US08310017B2 Pressure sensor and method of manufacturing the same 有权
压力传感器及其制造方法

  • 专利标题: Pressure sensor and method of manufacturing the same
  • 专利标题(中): 压力传感器及其制造方法
  • 申请号: US12805612
    申请日: 2010-08-10
  • 公开(公告)号: US08310017B2
    公开(公告)日: 2012-11-13
  • 发明人: Seiji Mori
  • 申请人: Seiji Mori
  • 申请人地址: JP Yokohama-Shi
  • 专利权人: Marusan Name Co., Ltd.
  • 当前专利权人: Marusan Name Co., Ltd.
  • 当前专利权人地址: JP Yokohama-Shi
  • 代理商 Manabu Kanesaka
  • 优先权: JP2009-235909 20091013
  • 主分类号: H01L29/84
  • IPC分类号: H01L29/84
Pressure sensor and method of manufacturing the same
摘要:
The present invention provides a pressure sensor and a method of manufacturing the same, which can change resistance to load smoothly in a relatively small load range and detect the pressure to the extent of relatively large load range. An uneven layer 6 is formed of a resin containing non-conductive particles 6a and having insulation properties, on a surface of the second substrate 3, and a resistor layer 7 containing at least carbon powder and having a certain film thickness is formed on a surface of the uneven layer 6. A sum of a film thickness of the uneven layer 6 between the non-conductive particles 6a and a film thickness of the resistor layer 7 is smaller than a particle diameter of non-conductive particles 6a included in the uneven layer, and at least a resistor layer 7 is formed on the non-conductive particles 6a and between the non-conductive particles 6a.
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