发明授权
- 专利标题: Piezoelectric thin film element, and piezoelectric thin film device
- 专利标题(中): 压电薄膜元件和压电薄膜器件
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申请号: US12814544申请日: 2010-06-14
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公开(公告)号: US08310136B2公开(公告)日: 2012-11-13
- 发明人: Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
- 申请人: Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Cable, Ltd.
- 当前专利权人: Hitachi Cable, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Fleit Gibbons Gutman Bongini & Bianco PL
- 代理商 Martin Fleit; Paul D. Bianco
- 优先权: JP2009-147994 20090622
- 主分类号: H01L41/187
- IPC分类号: H01L41/187
摘要:
A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (NaxKyLiz)NbO3 (0≦x 1≦, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and an upper electrode disposed on a substrate, wherein the piezoelectric thin film has a crystal structure of a pseudo-cubic crystal or a tetragonal crystal or an orthorhombic crystal, or has a composition in which one of these crystals exists or at least two or more of them coexist, and is preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and in the ratio of component (001) to component (111), volume fraction of the component (001) falls within a range of 60% or more and 100% or less, and the volume fraction of the component (111) falls within a range of 0% or more and 40% or less, in a case that the total of the component (001) and the component (111) is set to be 100%.
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