发明授权
- 专利标题： Nitride semiconductor laser device
- 专利标题（中）： 氮化物半导体激光器件
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申请号： US13302266申请日： 2011-11-22
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公开(公告)号： US08311070B2公开(公告)日： 2012-11-13
- 发明人: Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
- 申请人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2008-301104 20081126
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.
公开/授权文献
- US20120063986A1 NITRIDE SEMICONDUCTOR LASER DEVICE 公开/授权日：2012-03-15
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