发明授权
- 专利标题: Error detection/correction based memory management
- 专利标题(中): 基于错误检测/校正的内存管理
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申请号: US12606486申请日: 2009-10-27
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公开(公告)号: US08312349B2公开(公告)日: 2012-11-13
- 发明人: Cory Reche , Lee Nevill , Tim Martin
- 申请人: Cory Reche , Lee Nevill , Tim Martin
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Brooks, Cameron & Huebsch, PLLC
- 主分类号: G06F11/00
- IPC分类号: G06F11/00
摘要:
The present disclosure includes methods, devices, and systems for error detection/correction based memory management. One embodiment includes performing a read operation with respect to a particular group of memory cells of a memory device and, if the read operation results in an uncorrectable error, determining whether to retire the particular group of memory cells in response to a status of an indicator corresponding to the particular group of memory cells, wherein the status of the indicator indicates whether the particular group of memory cells has a previous uncorrectable error associated therewith.
公开/授权文献
- US20110099458A1 ERROR DETECTION/CORRECTION BASED MEMORY MANAGEMENT 公开/授权日:2011-04-28
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