发明授权
US08312394B2 Method and apparatus for determining mask layouts for a spacer-is-dielectric self-aligned double-patterning process
有权
用于确定间隔物电介质自对准双图案化工艺的掩模布局的方法和装置
- 专利标题: Method and apparatus for determining mask layouts for a spacer-is-dielectric self-aligned double-patterning process
- 专利标题(中): 用于确定间隔物电介质自对准双图案化工艺的掩模布局的方法和装置
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申请号: US12955670申请日: 2010-11-29
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公开(公告)号: US08312394B2公开(公告)日: 2012-11-13
- 发明人: Yonchan Ban , Kevin D. Lucas
- 申请人: Yonchan Ban , Kevin D. Lucas
- 申请人地址: US CA Mountain View
- 专利权人: Synopsys, Inc.
- 当前专利权人: Synopsys, Inc.
- 当前专利权人地址: US CA Mountain View
- 代理机构: Park, Vaughan, Fleming & Dowler LLP
- 代理商 Laxman Sahasrabuddhe
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
Methods and apparatuses are described for determining mask layouts for printing a design intent on a wafer using a spacer-is-dielectric self-aligned double-patterning process. A system can determine whether a graph corresponding to a design intent is two-colorable. If the graph is not two-colorable, the system can merge one or more pairs of shapes in the design intent to obtain a modified design intent, so that a modified graph corresponding to the modified design intent is two-colorable. The system can then determine a two-coloring for the modified graph. Next, the system can place one or more core shapes in a mandrel mask layout which correspond to vertices in the modified graph that are associated with a selected color in the two-coloring. The system can then place one or more shapes in a trim mask layout for separating the shapes in the design intent that were merged.
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