发明授权
- 专利标题： Fabrication method for resin-encapsulated semiconductor device
- 专利标题（中）： 树脂封装半导体器件的制造方法
-
申请号： US13108430申请日： 2011-05-16
-
公开(公告)号： US08313983B2公开(公告)日： 2012-11-20
- 发明人: Ryoichi Kajiwara , Shigehisa Motowaki , Kazutoshi Itou , Hiroshi Hozoji
- 申请人： Ryoichi Kajiwara , Shigehisa Motowaki , Kazutoshi Itou , Hiroshi Hozoji
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2008-020045 20080131
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.
公开/授权文献
信息查询
IPC分类:
