发明授权
- 专利标题： Nanowire FET having induced radial strain
- 专利标题（中）： 纳米线FET引起径向应变
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申请号： US12631203申请日： 2009-12-04
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公开(公告)号： US08313990B2公开(公告)日： 2012-11-20
- 发明人: Sarunya Bangsaruntip , Guy Cohen , Conal E. Murray , Jeffrey W. Sleight
- 申请人： Sarunya Bangsaruntip , Guy Cohen , Conal E. Murray , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/76
摘要：
An intermediate process device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads, a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor and silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain in the nanowire.
公开/授权文献
- US20110133163A1 NANOWIRE FET HAVING INDUCED RADIAL STRAIN 公开/授权日：2011-06-09
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