发明授权
- 专利标题： Semiconductor including lateral HEMT
- 专利标题（中）： 半导体包括横向HEMT
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申请号： US12764669申请日： 2010-04-21
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公开(公告)号： US08314447B2公开(公告)日： 2012-11-20
- 发明人: Franz Hirler , Walter Rieger , Markus Zundel
- 申请人： Franz Hirler , Walter Rieger , Markus Zundel
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 优先权： DE102009018054 20090421
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate. Furthermore, the lateral HEMT has a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer. In addition, the lateral HEMT has a third layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type, and is arranged at least partially in the first layer.
公开/授权文献
- US20100264462A1 SEMICONDUCTOR INCLUDING LATERAL HEMT 公开/授权日：2010-10-21
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