发明授权
- 专利标题： MIS transistor and CMOS transistor
- 专利标题（中）： MIS晶体管和CMOS晶体管
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申请号： US12604015申请日： 2009-10-22
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公开(公告)号： US08314449B2公开(公告)日： 2012-11-20
- 发明人: Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
- 申请人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
- 申请人地址： JP Tsukuba, Ibaraki Prefecture
- 专利权人： Foundation For Advancement Of International Science
- 当前专利权人： Foundation For Advancement Of International Science
- 当前专利权人地址： JP Tsukuba, Ibaraki Prefecture
- 代理机构： Locke Lord LLP
- 优先权： JP2003-170118 20030613
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate (702, 910) comprising a projecting part (704, 910B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (708, 920B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (706, 930B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region (710a, 710b, 910c, 910d) formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.
公开/授权文献
- US20100038722A1 MIS TRANSISTOR AND CMOS TRANSISTOR 公开/授权日：2010-02-18
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