发明授权
- 专利标题： Variable ring width SDD
- 专利标题（中）： 可变环宽SDD
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申请号： US12617313申请日： 2009-11-12
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公开(公告)号： US08314468B2公开(公告)日： 2012-11-20
- 发明人: Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
- 申请人： Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
- 申请人地址： US UT Orem
- 专利权人： Moxtek, Inc.
- 当前专利权人： Moxtek, Inc.
- 当前专利权人地址： US UT Orem
- 代理机构： Thorpe North & Western LLP
- 优先权： JP2009-157627 20090702
- 主分类号： H01L31/115
- IPC分类号： H01L31/115
摘要：
A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
公开/授权文献
- US20100314706A1 VARIABLE RING WIDTH SDD 公开/授权日：2010-12-16
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