发明授权
- 专利标题： Electrostatic discharge protection circuit, integrated circuit and method of protecting circuitry from an electrostatic discharge voltage
- 专利标题（中）： 静电放电保护电路，集成电路和保护电路免受静电放电电压的影响
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申请号： US12560475申请日： 2009-09-16
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公开(公告)号： US08315024B2公开(公告)日： 2012-11-20
- 发明人: Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krysztof Domanski
- 申请人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krysztof Domanski
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Infineon Techn. AG Patent Department
- 主分类号： H02H3/22
- IPC分类号： H02H3/22
摘要：
Implementations are presented herein that include an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a first transistor and a second transistor. The first transistor has a first terminal that is coupled to a first supply line and a bulk that is coupled to a second supply line. The second transistor has a first terminal that is coupled to the second supply line, a bulk that is coupled to the first supply line and a second terminal that is coupled to a second terminal of the first transistor to define a protected node. The ESD protection circuit further includes a current limiting element that has a first terminal that is coupled to the protected node.
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