发明授权
- 专利标题: Memory interface circuit and semiconductor device
- 专利标题(中): 存储器接口电路和半导体器件
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申请号: US13272856申请日: 2011-10-13
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公开(公告)号: US08315109B2公开(公告)日: 2012-11-20
- 发明人: Hideo Mochizuki
- 申请人: Hideo Mochizuki
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Foley & Lardner LLP
- 优先权: JP2010-247398 20101104
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
There is a need to provide a small-sized memory interface circuit capable of adjusting timing between a strobe signal and a data signal without interrupting a normal memory access.An expected value acquisition latch latches write data in synchronization with a clock signal. A WDLL outputs a write strobe signal WDQS. An RDLL outputs a delayed write strobe signal WDQS_d. A read data latch latches looped-back write data in synchronization with the delayed write strobe signal WDQS_d. A comparator compares the read data latch with an output from the expected value acquisition latch. A register portion stores a delay value to be placed in the RDLL. A register control portion updates a delay value in the register portion in accordance with a comparison result. A delay selection portion places a delay value read from the register portion in the RDLL.
公开/授权文献
- US20120113729A1 MEMORY INTERFACE CIRCUIT AND SEMICONDUCTOR DEVICE 公开/授权日:2012-05-10
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