发明授权
US08316326B1 System and method for applying phase effects of mask diffraction patterns
有权
用于施加掩模衍射图案的相位效应的系统和方法
- 专利标题: System and method for applying phase effects of mask diffraction patterns
- 专利标题(中): 用于施加掩模衍射图案的相位效应的系统和方法
-
申请号: US12435246申请日: 2009-05-04
-
公开(公告)号: US08316326B1公开(公告)日: 2012-11-20
- 发明人: Christophe Pierrat
- 申请人: Christophe Pierrat
- 申请人地址: US CA San Jose
- 专利权人: Cadence Design Systems, Inc.
- 当前专利权人: Cadence Design Systems, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Kenyon & Kenyon LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
In accordance with some embodiments, a method is provided for creating a photolithographic component, comprising: determining a target pattern for a circuit layout, the target pattern comprising target features; identifying a set of periodic target features within the target pattern; calculating a relationship between feature and pitch for the set of periodic target features; and determining a mask pattern from the target pattern using the relationship, wherein the mask pattern has a set of periodic mask features configured to result in projection of a first subset of the set of periodic target features when exposed to a light source that induces a first phase effect, and configured to result in projection of a second subset of the set of periodic target features when exposed to a light source that induces a second phase effect. In further embodiments, the method outputs the mask pattern as a mask dataset.
信息查询