发明授权
US08316326B1 System and method for applying phase effects of mask diffraction patterns 有权
用于施加掩模衍射图案的相位效应的系统和方法

System and method for applying phase effects of mask diffraction patterns
摘要:
In accordance with some embodiments, a method is provided for creating a photolithographic component, comprising: determining a target pattern for a circuit layout, the target pattern comprising target features; identifying a set of periodic target features within the target pattern; calculating a relationship between feature and pitch for the set of periodic target features; and determining a mask pattern from the target pattern using the relationship, wherein the mask pattern has a set of periodic mask features configured to result in projection of a first subset of the set of periodic target features when exposed to a light source that induces a first phase effect, and configured to result in projection of a second subset of the set of periodic target features when exposed to a light source that induces a second phase effect. In further embodiments, the method outputs the mask pattern as a mask dataset.
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