发明授权
- 专利标题: Radiation-emitting semiconductor chip
- 专利标题(中): 辐射发射半导体芯片
-
申请号: US12991864申请日: 2009-04-17
-
公开(公告)号: US08319250B2公开(公告)日: 2012-11-27
- 发明人: Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
- 申请人: Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Cozen O'Connor
- 优先权: DE102008022942 20080509
- 国际申请: PCT/DE2009/000546 WO 20090417
- 国际公布: WO2009/135457 WO 20091112
- 主分类号: H01L33/38
- IPC分类号: H01L33/38
摘要:
A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
公开/授权文献
- US20110272728A1 Radiation-Emitting Semiconductor Chip 公开/授权日:2011-11-10
信息查询
IPC分类: