发明授权
- 专利标题： Etch stop layer for memory cell reliability improvement
- 专利标题（中）： 蚀刻停止层，提高记忆体的可靠性
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申请号： US11008240申请日： 2004-12-10
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公开(公告)号： US08319266B1公开(公告)日： 2012-11-27
- 发明人: Hiroyuki Kinoshita , Angela Hui , Hsiao-Han Thio , Kuo-Tung Chang , Minh Van Ngo , Hiroyuki Ogawa
- 申请人： Hiroyuki Kinoshita , Angela Hui , Hsiao-Han Thio , Kuo-Tung Chang , Minh Van Ngo , Hiroyuki Ogawa
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.,Spansion L.L.C.
- 当前专利权人： Advanced Micro Devices, Inc.,Spansion L.L.C.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A memory device and a method of making the memory device are provided. A first dielectric layer is formed on a substrate, a floating gate is formed on the first dielectric layer, a second dielectric layer is formed on the floating gate, a control gate is formed on the second dielectric layer, and at least one film, including a conformal film, is formed over a surface of the memory device.
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