发明授权
- 专利标题： Semiconductor device including carbon-containing electrode and method for fabricating the same
- 专利标题（中）： 包含含碳电极的半导体装置及其制造方法
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申请号： US12648337申请日： 2009-12-29
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公开(公告)号： US08319296B2公开(公告)日： 2012-11-27
- 发明人: Kwan-Woo Do , Kee-Jeung Lee , Young-Dae Kim , Mi-Hyoung Lee , Jeong-Yeop Lee
- 申请人： Kwan-Woo Do , Kee-Jeung Lee , Young-Dae Kim , Mi-Hyoung Lee , Jeong-Yeop Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor, Inc.
- 当前专利权人： Hynix Semiconductor, Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLC
- 优先权： KR10-2009-0117394 20091130
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.
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