发明授权
- 专利标题: Semiconductor device and method for making same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12143577申请日: 2008-06-20
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公开(公告)号: US08320153B2公开(公告)日: 2012-11-27
- 发明人: Michael Sommer
- 申请人: Michael Sommer
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Slater & Matsil, LLP
- 主分类号: G11C17/00
- IPC分类号: G11C17/00
摘要:
Embodiments relate to a semiconductor device, including a channel area; a gate line extending along the channel area so that the channel area can be set into a conductive state by activating the gate line; a plurality of terminals including an electrical connection to the channel area, so that the plurality of terminals is connectable to a predetermined voltage by activating the gate line.
公开/授权文献
- US20090316463A1 Semiconductor Device and Method for Making Same 公开/授权日:2009-12-24
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