发明授权
- 专利标题： Static random access memory with data controlled power supply
- 专利标题（中）： 具有数据控制电源的静态随机存取存储器
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申请号： US12985289申请日： 2011-01-05
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公开(公告)号： US08320164B2公开(公告)日： 2012-11-27
- 发明人: Ching-Te Chuang , Hao-I Yang , Mao-Chih Hsia , Yung-Wei Lin , Chien-Yu Lu , Ming-Hsien Tu , Wei Hwang , Shyh-Jye Jou , Chia-Cheng Chen , Wei-Chiang Shih
- 申请人： Ching-Te Chuang , Hao-I Yang , Mao-Chih Hsia , Yung-Wei Lin , Chien-Yu Lu , Ming-Hsien Tu , Wei Hwang , Shyh-Jye Jou , Chia-Cheng Chen , Wei-Chiang Shih
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu TW Hsinchu
- 专利权人： Faraday Technology Corp.,National Chiao Tung University
- 当前专利权人： Faraday Technology Corp.,National Chiao Tung University
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu TW Hsinchu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.
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