发明授权
- 专利标题: Semiconductor memory with improved block switching
- 专利标题(中): 半导体存储器具有改进的块切换
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申请号: US13233602申请日: 2011-09-15
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公开(公告)号: US08320196B2公开(公告)日: 2012-11-27
- 发明人: Thomas Yan , Luca Fasoli , Roy E Scheuerlein
- 申请人: Thomas Yan , Luca Fasoli , Roy E Scheuerlein
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk 3D LLC
- 当前专利权人: SanDisk 3D LLC
- 当前专利权人地址: US CA Milpitas
- 代理机构: Vierra Magen Marcus & DeNiro LLP
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
A non-volatile memory core comprises one or more memory bays. Each memory bay comprises one or more memory blocks that include a grouping of non-volatile storage elements. In one embodiment, memory blocks in a particular memory bay share a group of read/write circuits. During a memory operation, memory blocks are transitioned into active and inactive states. The process of transitioning blocks from an inactive state to an active state includes enabling charge sharing between a memory block entering the active state and another memory block that was previously in the active state. This charge sharing improves performance and/or reduces energy consumption for the memory system.
公开/授权文献
- US20120002476A1 Semiconductor Memory With Improved Block Switching 公开/授权日:2012-01-05
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