发明授权
- 专利标题： Group III nitride crystal and manufacturing method thereof
- 专利标题（中）： III族氮化物晶体及其制造方法
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申请号： US11561662申请日： 2006-11-20
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公开(公告)号： US08323404B2公开(公告)日： 2012-12-04
- 发明人: Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
- 申请人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
- 申请人地址： JP Tokyo
- 专利权人： Ricoh Company, Ltd.
- 当前专利权人： Ricoh Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-335684 20051121
- 主分类号： C30B7/14
- IPC分类号： C30B7/14
摘要：
A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.
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