发明授权
US08324108B2 Increasing robustness of a dual stress liner approach in a semiconductor device by applying a wet chemistry 有权
通过应用湿化学法在半导体器件中提高双应力衬垫方法的鲁棒性

Increasing robustness of a dual stress liner approach in a semiconductor device by applying a wet chemistry
摘要:
In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material systems formed on the basis of a dual stress liner approach may be reduced.
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