发明授权
US08324108B2 Increasing robustness of a dual stress liner approach in a semiconductor device by applying a wet chemistry
有权
通过应用湿化学法在半导体器件中提高双应力衬垫方法的鲁棒性
- 专利标题: Increasing robustness of a dual stress liner approach in a semiconductor device by applying a wet chemistry
- 专利标题(中): 通过应用湿化学法在半导体器件中提高双应力衬垫方法的鲁棒性
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申请号: US13034777申请日: 2011-02-25
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公开(公告)号: US08324108B2公开(公告)日: 2012-12-04
- 发明人: Ralf Richter , Markus Lenski , Torsten Huisinga
- 申请人: Ralf Richter , Markus Lenski , Torsten Huisinga
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Williams, Morgan & Amerson, P.C.
- 优先权: DE102010038744 20100730
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461
摘要:
In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material systems formed on the basis of a dual stress liner approach may be reduced.
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