发明授权
- 专利标题： Nonvolatile memory device and method of driving the same
- 专利标题（中）： 非易失存储器件及其驱动方法
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申请号： US12472636申请日： 2009-05-27
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公开(公告)号： US08325517B2公开(公告)日： 2012-12-04
- 发明人: Hyung-Gon Kim , Sung-Soo Lee
- 申请人： Hyung-Gon Kim , Sung-Soo Lee
- 申请人地址： KR Suwon-sii, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-sii, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2008-0052241 20080603
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04 ; G06F13/00
摘要：
Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.
公开/授权文献
- US20090296467A1 NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME 公开/授权日：2009-12-03