发明授权
- 专利标题: Efficient carrier injection in a semiconductor device
- 专利标题(中): 在半导体器件中有效的载流子注入
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申请号: US12941940申请日: 2010-11-08
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公开(公告)号: US08325775B2公开(公告)日: 2012-12-04
- 发明人: Ralph H. Johnson
- 申请人: Ralph H. Johnson
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Maschoff Gilmore & Israelsen
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
公开/授权文献
- US20110049471A1 EFFICIENT CARRIER INJECTION IN A SEMICONDUCTOR DEVICE 公开/授权日:2011-03-03