发明授权
- 专利标题: Phase shift mask blank and phase shift mask
- 专利标题(中): 相移掩模空白和相移掩模
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申请号: US13001365申请日: 2009-06-25
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公开(公告)号: US08329364B2公开(公告)日: 2012-12-11
- 发明人: Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
- 申请人: Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
- 申请人地址: JP Tokyo
- 专利权人: Hoya Corporation
- 当前专利权人: Hoya Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 国际申请: PCT/JP2009/061574 WO 20090625
- 国际公布: WO2009/157506 WO 20091230
- 主分类号: G06F1/22
- IPC分类号: G06F1/22
摘要:
The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
公开/授权文献
- US20110111332A1 PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK 公开/授权日:2011-05-12
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