发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12618944申请日： 2009-11-16
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公开(公告)号： US08329506B2公开(公告)日： 2012-12-11
- 发明人: Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
- 申请人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2008-296901 20081120
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).